In situ electronic transport measurement as a tool for investigating the 2D doping in metal-C60 interfacial systems

Wenbing Zhao; J. Chen; K. Wu; J. L. Zhang; C. Y. Li; D. L. Yin; Z. N. Gu; H. Zhou; Z. X. Jin

doi:10.1088/0953-8984/6/41/002

In situ electronic transport measurement as a tool for investigating the 2D doping in metal-C60 interfacial systems

Wenbing Zhao
, J. Chen
, K. Wu
, J. L. Zhang
, C. Y. Li
, D. L. Yin
, Z. N. Gu
, H. Zhou
, Z. X. Jin

Electrical and Computer Engineering

Peking University

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The two-dimensional doping by charge transfer and/or diffusion of metal atoms into C60 has been studied by in situ electronic transport measurements during the deposition of metal-C60 ultrathin bilayers. The results show that the transport properties of these interfacial systems are significantly altered by such doping processes. Some useful information about the charge transfer from metal to C60 and the electronic transport properties of the metal-doped-monolayer C60 can be obtained after careful analysis.

Original language	English
Article number	002
Journal	Journal of Physics: Condensed Matter
Volume	6
Issue number	41
DOIs	https://doi.org/10.1088/0953-8984/6/41/002
State	Published - Dec 1 1994

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title = "In situ electronic transport measurement as a tool for investigating the 2D doping in metal-C60 interfacial systems",

abstract = "The two-dimensional doping by charge transfer and/or diffusion of metal atoms into C60 has been studied by in situ electronic transport measurements during the deposition of metal-C60 ultrathin bilayers. The results show that the transport properties of these interfacial systems are significantly altered by such doping processes. Some useful information about the charge transfer from metal to C60 and the electronic transport properties of the metal-doped-monolayer C60 can be obtained after careful analysis.",

author = "Wenbing Zhao and J. Chen and K. Wu and Zhang, \{J. L.\} and Li, \{C. Y.\} and Yin, \{D. L.\} and Gu, \{Z. N.\} and H. Zhou and Jin, \{Z. X.\}",

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T1 - In situ electronic transport measurement as a tool for investigating the 2D doping in metal-C60 interfacial systems

AU - Zhao, Wenbing

AU - Chen, J.

AU - Wu, K.

AU - Zhang, J. L.

AU - Li, C. Y.

AU - Yin, D. L.

AU - Gu, Z. N.

AU - Zhou, H.

AU - Jin, Z. X.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - The two-dimensional doping by charge transfer and/or diffusion of metal atoms into C60 has been studied by in situ electronic transport measurements during the deposition of metal-C60 ultrathin bilayers. The results show that the transport properties of these interfacial systems are significantly altered by such doping processes. Some useful information about the charge transfer from metal to C60 and the electronic transport properties of the metal-doped-monolayer C60 can be obtained after careful analysis.

AB - The two-dimensional doping by charge transfer and/or diffusion of metal atoms into C60 has been studied by in situ electronic transport measurements during the deposition of metal-C60 ultrathin bilayers. The results show that the transport properties of these interfacial systems are significantly altered by such doping processes. Some useful information about the charge transfer from metal to C60 and the electronic transport properties of the metal-doped-monolayer C60 can be obtained after careful analysis.

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JO - Journal of Physics: Condensed Matter

JF - Journal of Physics: Condensed Matter

IS - 41

M1 - 002

ER -

In situ electronic transport measurement as a tool for investigating the 2D doping in metal-C60 interfacial systems

Abstract

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