The bias-temperature effect in a rectifying Nb/C60/p-Si structure: Evidence for mobile negative charges in the solid C60 film

K. M. Chen; Y. Q. Jia; S. X. Jin; K. Wu; X. D. Zhang; Wenbing Zhao; C. Y. Li; Z. N. Gu

doi:10.1088/0953-8984/6/27/002

The bias-temperature effect in a rectifying Nb/C60/p-Si structure: Evidence for mobile negative charges in the solid C60 film

K. M. Chen
, Y. Q. Jia
, S. X. Jin
, K. Wu
, X. D. Zhang
, Wenbing Zhao
, C. Y. Li
, Z. N. Gu

Electrical and Computer Engineering

Peking University

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Solid C60 film was grown on a p-type Si substrate and a rectifying Nb/C60/p-Si structure was prepared. Capacitance-voltage (C-V) measurements showed that for temperatures above 260 K the C-V curve of the Nb/Co60/p-Si structure shifted along the voltage axis depending on biasing conditions. We analysed this effect to reveal the existence of mobile negative charges in the C60 layer and determine the density of the mobile charges.

Original language	English
Article number	002
Journal	Journal of Physics: Condensed Matter
Volume	6
Issue number	27
DOIs	https://doi.org/10.1088/0953-8984/6/27/002
State	Published - Dec 1 1994

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title = "The bias-temperature effect in a rectifying Nb/C60/p-Si structure: Evidence for mobile negative charges in the solid C60 film",

abstract = "Solid C60 film was grown on a p-type Si substrate and a rectifying Nb/C60/p-Si structure was prepared. Capacitance-voltage (C-V) measurements showed that for temperatures above 260 K the C-V curve of the Nb/Co60/p-Si structure shifted along the voltage axis depending on biasing conditions. We analysed this effect to reveal the existence of mobile negative charges in the C60 layer and determine the density of the mobile charges.",

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AU - Chen, K. M.

AU - Jia, Y. Q.

AU - Jin, S. X.

AU - Wu, K.

AU - Zhang, X. D.

AU - Zhao, Wenbing

AU - Li, C. Y.

AU - Gu, Z. N.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - Solid C60 film was grown on a p-type Si substrate and a rectifying Nb/C60/p-Si structure was prepared. Capacitance-voltage (C-V) measurements showed that for temperatures above 260 K the C-V curve of the Nb/Co60/p-Si structure shifted along the voltage axis depending on biasing conditions. We analysed this effect to reveal the existence of mobile negative charges in the C60 layer and determine the density of the mobile charges.

AB - Solid C60 film was grown on a p-type Si substrate and a rectifying Nb/C60/p-Si structure was prepared. Capacitance-voltage (C-V) measurements showed that for temperatures above 260 K the C-V curve of the Nb/Co60/p-Si structure shifted along the voltage axis depending on biasing conditions. We analysed this effect to reveal the existence of mobile negative charges in the C60 layer and determine the density of the mobile charges.

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ER -

The bias-temperature effect in a rectifying Nb/C60/p-Si structure: Evidence for mobile negative charges in the solid C60 film

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